Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film

open access articleIn this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation

Inkjet Printing of Functional Electronic Memory Cells: A Step Forward to Green Electronics

open access journalNowadays, the environmental issues surrounding the production of electronics, from the perspectives of both the materials used and the manufacturing process, are of major concern. The usage, storage, disposal protocol and volume of waste material continue to increase the environmental footprint of our increasingly “throw away society”. Almost ironically, society is increasingly involved in pollution prevention, resource consumption issues and post-consumer waste management. Clearly, a dichotomy between environmentally aware usage and consumerism exists. The current technology used to manufacture functional materials and electronic devices requires high temperatures for material deposition processes, which results in the generation of harmful chemicals and radiation. With such issues in mind, it is imperative to explore new electronic functional materials and new manufacturing pathways. Here, we explore the potential of additive layer manufacturing, inkjet printing technology which provides an innovative manufacturing pathway for functional materials (metal nanoparticles and polymers), and explore a fully printed two terminal electronic memory cell. In this work, inkjetable materials (silver (Ag) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) were first printed by a piezoelectric Epson Stylus P50 inkjet printer as stand-alone layers, and secondly as part of a metal (Ag)/active layer (PEDOT:PSS)/metal (Ag) crossbar architecture. The quality of the individual multi-layers of the printed Ag and PEDOT:PSS was first evaluated via optical microscopy and scanning electron microscopy (SEM). Furthermore, an electrical characterisation of the printed memory elements was performed using an HP4140B picoammeter

Emulating long-term synaptic dynamics with memristive devices

The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS technology, the properties of the memristive material should be harnessed in the context of such computation, under the view that biological synapses are memristors. Here we demonstrate that single solid-state TiO2 memristors can exhibit associative plasticity phenomena observed in biological cortical synapses, and are captured by a phenomenological plasticity model called triplet rule. This rule comprises of a spike-timing dependent plasticity regime and a classical hebbian associative regime, and is compatible with a large amount of electrophysiology data. Via a set of experiments with our artificial, memristive, synapses we show that, contrary to conventional uses of solid-state memory, the co-existence of field- and thermally-driven switching mechanisms that could render bipolar and/or unipolar programming modes is a salient feature for capturing long-term potentiation and depression synaptic dynamics. We further demonstrate that the non-linear accumulating nature of memristors promotes long-term potentiating or depressing memory transitions

Comparative Study of Silicon Nanowires Grown From Ga, In, Sn, and Bi for Energy Harvesting

The file attached to this record is the author's final peer reviewed version. The Publisher's final version can be found by following the DOI link.A high density of silicon nanowires for solar cell applications was fabricated on a single crystalline silicon wafer, using low eutectic temperature metal catalysts, namely, gallium, indium, tin, and bismuth. The use of silicon nanowires is exploited for light trapping with an aim to enhance the efficiency of solar cells. Additionally, we have optimized the deposition parameters so that there is merely deposition of amorphous silicon along with the growth of silicon nanowires. Thus, it may improve the stability of silicon-based solar cells. The different catalysts used are extensively discussed with experimental results indicating stable growth and highly efficient silicon nanowires for photovoltaic applications. To test the stability, we measured the open-circuit voltage for four hours and the change in voltage was ±0.05 V. The fabrication of all-crystalline silicon solar cells was demonstrated using the conventional mature industrial manufacturing process that is presently used for the amorphous silicon solar cells. To summarize, this research compares various post-transition metals as a catalyst for the growth of nanowires discussing their properties, and such silicon nanowires can be utilized in several other applications not only limited to photovoltaic research

Modelling of Current Percolation Channels in Emerging Resistive Switching Elements

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory elements. Identifying the vital physical mechanisms behind resistive switching can enable these devices to be utilized more efficiently, reliably and in the long-term. In this paper, we present a new approach for analysing resistive switching by modelling the active core of two terminal devices as 2D and 3D grid circuit breaker networks. This model is employed to demonstrate that substantial resistive switching can only be supported by the formation of continuous current percolation channels, while multi-state capacity is ascribed to the establishment and annihilation of multiple channels

Stochastic switching of TiO2 based memristive devices with identical initial memory states

In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution

Additive manufacturing of heat-sensitive polymer melt using a pallet-fed material extrusion

The file attached to this record is the author's final peer reviewed version. The Publisher's final version can be found by following the DOI link

Creating Electrical Bistability Using Nano-bits – Application in 2-Terminal Memory Devices

This is an Open Access article.Intensive research is currently underway to exploit the highly interesting properties of nano-bits (“nano-sized particles and molecules”) for optical, electronic and other applications. The basis of these unique properties is the small-size of these structures which result in quantum mechanical phenomena and interesting surface properties. The small molecules and/or nano-particles are selected in such a way so that it can create an internal electric in the nano-composite. We define a nanocomposite is an admixture of small molecules and/or nano-particles and a polymer. We have demonstrated the internal electric field in our devices, made from nano-bits (nano-particles and/or molecules) and insulating materials, can contribute to the electrical bistability i.e. two conductive states

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 μm thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 °C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 ˚C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells